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375D-03, STYLE Package 20275 1
120 Watts, 21 10-2170 MHz PUSH/PULL LATERAL MOSFET
Description
The PTF102003 is a 120-watt, internally matched LDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This device typically operates at 48% efficiency (P-1dB) and 14 dB linear gain. Full gold metallization ensures excellent device lifetime and reliability.
PTF102003
Key Features
* * INTERNALLY MATCHED Typical WCDMA Performance at 28 V - Average Output Power = 20 W atts - Gain = 14 dB - Efficiency = 22% (channel bandwidth 3.84 MHz, adjacent channels 5 MHz, peak/avg 8.5:1 at 0.01% CCD)
Typi cal Singl e Carrier WCDMA Perfor mance
-35 -40 Efficiency Gain 25 20 15 10 ACPR V DD = 28 V IDQ = 1.45 A f = 2170 MHz 15 20 25 5 0
-45 -50 -55 -60 0
Gain (dB) & Efficiency (%)
ACPR (dBc )x
* Typical CW Performance at 28 V - Output Power at P1-dB = 120 W atts - Gain = 13 dB - Efficiency = 48% * Full Gold Metallization * Integrated ESD Protection; Class 1 (minimum) Human Body Model * Excellent Thermal Stability * Broadband Internal Matching * Low HCI Drift * Capable of Handling 10:1 VSWR @ 28 V , 120 Watts (CW) Output Power
5
10
Output Pow er (Watts )
Guaranteed Performance
WCDMA Measurements (in test fixture)
VDD = 28 V, IDQ = 1.45 A, POUT = 20 W AVG f = 2170 MHz, Single Carrier 3GPP Channel Bandwidth 3.84 MHz, Adj Channels 5 MHz, Peak to Avg 8.5:1
Characteristic
Adjacent Channel Power Ratio Gain Drain Efficiency
Symbol
ACPR Gps
D
Min
-- 13 19
Typ
-45 14.5 22
Max
-40 -- --
Units
dB dB %
Two-Tone Measurements (in test fixture)
VDD = 28 V, IDQ = 1.20 A, POUT = 120 W PEP, f = 2170 MHz, Tone Spacing = 100 kHz
Characteristic
Gain Drain Efficiency Intermodulation Distortion All published data at TCASE = 25C unless otherwise indicated.
Symbol
Gps
D
Min
12.5 31 -27
Typ
14 36 -30
Max
-- -- --
Units
dB % dBc
IMD
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PTF 102003
Electrical Characteristics
Characteristic
Drain-Source Breakdown Voltage Drain Leakage Current On-State Resistance Quiescent Current Gate Voltage Gate Leakage Current (Guaranteed)
Conditions
VGS = 0 V, IDS = 1 A/Side VDS = 28 V, VGS = 0 V/Side VGS = 10 V, IDS = 1 A/Side VDS = 28 V, ID = 700 mA/Side VGS = 10 V, VDS = 0 V/Side
Symbol
V(BR)DSS IDSS RDS(on) VGS(Q) IGSS
Min
65 -- -- 2.5 --
Typ
-- -- 0.13 3.4 --
Max
-- 1.0 -- 4 100
Units
Volts A Ohms Volts nA
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C) TSTG R JC
Symbol
VDSS VGS TJ PD
Value
65 +15, -0.5 200 330 1.88 -40 to +150 0.55
Unit
Volts Volts C Watts W/C C C/W
Typical Performance
Broa dba nd Li ne arity Perfor mance
40 0 Efficiency IRL Gain V DD = 28 V, IDQ = 1.2 A POUT = 120 W PEP 2120 2140 2160 IM3 -5 -10
-40
IMD vs. Output Pow er (PEP)
-30 V DD = 28 V, f = 2170 MHz -Tone Spacing = 100 kHz IDQ = 1.6 A -50 IDQ = 1.4 A IDQ = 1.2 A -60 IDQ = 1.0 A
Gain (dB) & Efficiency (%)
35 30 25 20 15 10 5
-20 -25 -30 -35 -40 2200
0 2100
IMD (dBc ) x
IRL & IMD
-15
2180
-70 1 10 100 1000
Freque nc y (MHz)
Output Pow er (Watts PEP)
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PTF 102003
Typical Performance
(cont.)
IMD vs. Output Pow er Efficiency
-20 -30 V DD = 28 V IDQ = 1.2 A Efficiency IM3 40 32 24 16 8 0 140
Pow er Gain vs. Output Pow er
15
IMD dBc
-40 -50 -60 -70 0 20 40 60 80 100
Power Gain (dB)
14 13 12 11 10 1 10 100 1000 IDQ = 1.2 A IDQ = 1.0 A V DD = 28 V IDQ = 1.6 A IDQ = 1.4 A
IM5 IM7
120
Output Pow er (Watts -PEP)
Output Pow er (Watts CW)
Gate-Source Voltage vs. Case Temperature
1.03 1.02 Voltage normalized to 1.0 V Series show current (A)
Capa citance vs. Suppl y Voltage (per side ) *
180 160 30 Cgs V GS = 0 V f = 1 MHz Cds Cdg 0 10 20 30 40 25
Bias Voltage (V)
Cds & Cgs (pF)x
1.01 1.00 0.99 0.98 0.97 0.96 0.95 -20 30 80 0.80 3.07 5.33 7.60 9.87 12.13 130
140 120 100 80 60 40 20 0
15 10 5 0
Case Temperature (C)
Supply Voltage (Volt s) * This part is internally matched. Measurements of the finished product will not yield these results.
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Cdg (pF) x
20
PTF 102003
Broadband Circuit Impedance
VDD = 28 V, IDQ = 1.2 A, Pout = 20 W Avg 2 Tone 1 MHz Spacing Z0 = 50
Z Source
G G
D S
Z Load
D
Frequency
MHz 2100 2110 2140 2170 2200
Z Source
R 5.2 5.0 4.9 4.8 4.7 jX -6.58 -6.62 -6.73 -6.85 -7.10
Z Load
R 2.52 2.48 2.56 2.62 2.72 jX -7.6 -6.8 -6.2 -5.78 -5.17
Test Circuit
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PTF 102003
Test Circuit
(cont.)
Test Circuit Schematic for 2170 MHz DUT 1, 21 2 3 4, 14 5, 7 6, 8 9, 15 10, 16 11, 17 12, 18 13 19 20 PTF 102003 0.02 @ 2170 MHz 0.07 @ 2170 MHz 0.26 @ 2170 MHz 0.50 @ 2170 MHz 0.03 @ 2170 MHz 0.08 @ 2170 MHz 0.04 @ 2170 MHz 0.06 @ 2170 MHz 0.26 @ 2170 MHz 0.02 @ 2170 MHz 0.42 @ 2170 MHz 0.27 @ 2170 MHz 0.05 @ 2170 MHz LDMOS Transistor Microstrip 29.20 Microstrip 50 Microstrip 20.10 Microstrip 15.50 Microstrip 13.10 Microstrip 6.80 Microstrip 5.50 Microstrip 13.10 Microstrip 53.60 Microstrip 10.40 Microstrip 53.60 Microstrip 20.10 Microstrip 50 C1, C5, C8, C13 C2, C3, C7, C9, C6 C4 C12 C14 Capacitor, 10 F, 35 V, Tant TE Series SMD, Digi-Key PCS6106TR Capacitor, 6.8 pF, 100A 6R8 Capacitor, 1.6 pF, ATC 600B 1R6 BW Capacitor, 5.6 pF, 100B 5R6 Capacitor, 0.1 F, 50 V, Digi-Key PCC103BCT Capacitor, 3.3 pF, ATC 600B 3R3 BW Connector, SMA Female, Panel Mount Resistor, 3.3 K ohms, 1/16W 5% 0603 Digi-Key P3.3K GCT Resistor, 1 K ohms, 1/16W 5% 0603 Digi-Key P1.0K GCT 4003, .020", 1 oz. copper both sides, 1 layer. AlliedSignal
C10, C11 J1, J2 R1, R4 R2, R3 PCB
Assembly Diagram (not to scale)
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PTF 102003
Case Outline Specifications Case 20275
Peak Devices, Inc 2100 Central Ave, Suite 200 Boulder, Co 80301
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720-406-1221

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